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PDTA143TMB

Marking：00101000；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143TMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

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PDTA143XMB

Marking：00101001；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespick

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安世安世半導(dǎo)體(中國)有限公司

PDTA143ZMB

Marking：00101010；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

Featuresandbenefits ?100mAoutputcurrentcapability ?Reducescomponentcount ?Built-inbiasresistors ?Reducespickandplacecosts ?Simplifiescircuitdesign ?AEC-Q101qualified ?LeadlessultrasmallSMDplastic package ?Lowpackageheightof0.37mm

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA144EMB

Marking：00101011；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 47 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC144EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA144WMB

Marking：00101110；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 22 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC144WMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG2005BELD

Marking：00101000；Package：DFN1006D-2；20 V, 0.5 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aleadlessultrasmallSOD882D(DFN1006D-2)Surface-MountedDevice(SMD)plasticpackage withvisibleandsolderablesidepads. 2.Featuresandbenefits ?Averagefo

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BC847AQA

Marking：001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

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安世安世半導(dǎo)體(中國)有限公司

BC847BQA

Marking：001011；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

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PDTA115EMB

Marking：00100000；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA115TMB

Marking：00100001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    0010

  • 制造商：

    NTE Electronics

  • 功能描述：

    TO-3PML Style Transistor Insulator

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更多0010供應(yīng)商 更新時間2025-5-7 10:50:00

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