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零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
2N7002KU	文件：370.33 Kbytes Page：4 Pages	NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V.(HumanBodyModel) ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU	KECKEC CORPORATION KEC株式會(huì)社	KEC
2N7002KV	文件：425.76 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
2N7002KV	文件：1.1607 Mbytes Page：4 Pages	Plastic-EncapsulateMOSFETS FEATURE ?HighdensitycelldesignforLowRDS(on) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KV	文件：701.39 Kbytes Page：8 Pages	N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.3A RDS(ON)	RECTRON Rectron Semiconductor	RECTRON
2N7002KW	文件：170.76 Kbytes Page：5 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers	PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司	PANJIT
2N7002KW	文件：533.04 Kbytes Page：4 Pages	N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002KW	文件：624.98 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)	YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司	YANGJIE
2N7002KW	文件：291.95 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2N7002KW	文件：1.01269 Mbytes Page：8 Pages	N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
2N7002KW	文件：386.34 Kbytes Page：4 Pages	N-ChannelEnhancementMOSFET Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE

零件編號(hào)

下載訂購(gòu)

功能描述/絲印

制造商上傳企業(yè)

LOGO

2N7002KU

文件：370.33 Kbytes

Page：4 Pages

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V.(HumanBodyModel) ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU

KECKEC CORPORATION

KEC株式會(huì)社

KEC

2N7002KV

文件：425.76 Kbytes

Page：3 Pages

N-ChannelEnhancementModeFieldEffectTransistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCC

2N7002KV

文件：1.1607 Mbytes

Page：4 Pages

Plastic-EncapsulateMOSFETS

FEATURE ?HighdensitycelldesignforLowRDS(on) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

YFWDIODE

2N7002KV

文件：701.39 Kbytes

Page：8 Pages

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.3A RDS(ON)

RECTRON

Rectron Semiconductor

RECTRON

2N7002KW

文件：170.76 Kbytes

Page：5 Pages

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PANJIT

2N7002KW

文件：533.04 Kbytes

Page：4 Pages

N-ChSmallSignalMOSFETwithESDProtection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

2N7002KW

文件：624.98 Kbytes

Page：6 Pages

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

YANGJIE

2N7002KW

文件：291.95 Kbytes

Page：6 Pages

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

2N7002KW

文件：1.01269 Mbytes

Page：8 Pages

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBSEMI

2N7002KW

文件：386.34 Kbytes

Page：4 Pages

N-ChannelEnhancementMOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

YFWDIODE

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	2N7002K-RTK/P	KEC	24+	SOT-23	45000	熱賣(mài)優(yōu)勢(shì)現(xiàn)貨	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	2N7002K-RTK/P	KEC	2020+PB	SOT-23	11900	原裝正品可含稅交易	詢(xún)價(jià)
深圳興中揚(yáng)電子科技有限公司	2N7002K-RTK/P	東芝	24+	DIP/SOP	30000	東芝產(chǎn)品線200條型號(hào)頂級(jí)渠道	詢(xún)價(jià)
深圳市凌旭科技有限公司	2N7002K-RTK/P	KEC	2016+	SOT23	3000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢(xún)價(jià)
深圳市振宏微科技有限公司	2N7002K-RTK/P	SOT-23	23+	NA	15659	振宏微專(zhuān)業(yè)只做正品,假一罰百!	詢(xún)價(jià)
深圳誠(chéng)思涵科技有限公司	2N7002K-RTK/P	KEC	19+	SOT-23	200000		詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	2N7002K-RTK/P	KEC	1942+	SOT-23	9852	只做原裝正品現(xiàn)貨或訂貨!假一賠十!	詢(xún)價(jià)
上海市鑫鴻達(dá)電子	2N7002K-RTK/P	KEC	2022+		1000	全新原裝貨期兩周	詢(xún)價(jià)
深圳市億智騰科技有限公司	2N7002K-RTK/P	KEC	24+	SOT-23	6430	原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún)	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	2N7002K-RTK/P	原裝KEC	24+	SOT-23	63200	一級(jí)代理/放心采購(gòu)	詢(xún)價(jià)

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