| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：5N08L140；Package：PG-TDSON-8-33；OptiMOS?-5 Power Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-LogicLevel ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N08N012；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N08N013；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N08011；Package：PG-HDSOP-16-2；OptiMOS?-5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N06N008；Package：PG-HSOF-8-1；OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100avalanchet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N06N008；Package：PG-HSOG-8-1；OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100avalanchet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N06N008；Package：PG-HDSOP-16-1；OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100avalanchet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N0812L；Package：PG-HSOF-8-2；Automotive MOSFET OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?LinearFET(LINFET)andlowRDS(on)FET(ONFET)inonepackage ?DedicatedgatepinsforbothM | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N06050；Package：PG-TSDSON-8-33；OptiMOS?-5 Power Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-Normallevel ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N0431；Package：PG-TSDSON-8；N-channel - Enhancement mode - Normal Level Features ?OptiMOS?-powerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-NormalLevel ?AECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?GreenProduct(RoHScompliant) ?100Avalanchetested | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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