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AE9956

Cat5eUTPPatchCable

ASSMANN

ASSMANN WSW COMPONENTS

CEM9956A

DualN-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100UISTested ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SetTopBox ?LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CEM9956A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,3.7A,RDS(ON)=80m?@VGS=10V.RDS(ON)=110m?@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM9956AJPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT48Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. CONSTRUCTION *N-Ch

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

IRF9956

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF9956

PowerMOSFET(Vdss=30V,Rds(on)=0.10ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9956PBF

ULTRALOWONTESISTANCE

IRF

International Rectifier

IRF9956PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9956TR

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

NDS9956

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    AD9956/PCBZ

  • 制造商:

    Analog Devices Inc.

  • 類(lèi)別:

    開(kāi)發(fā)板,套件,編程器 > 評(píng)估和演示板及套件

  • 系列:

    AgileRF?

  • 包裝:

    散裝

  • 類(lèi)型:

    計(jì)時(shí)

  • 功能:

    直接數(shù)字合成(DDS)

  • 使用的 IC/零件:

    AD9956

  • 所含物品:

  • 描述:

    BOARD EVAL FOR AD9956

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5
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25+
20000
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ADI/亞德諾
24+
EvaluationBoard
10000
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Analog Devices
23+
1500
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23+
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6500
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3000
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24+
N/A
69000
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6521
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400 Msps 14 Bit DDS EvBd. w/24
6540
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更多AD9956/PCBZ供應(yīng)商 更新時(shí)間2025-5-15 10:08:00