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AO6601L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AWU6601

HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule

ANADIGICS

ANADIGICS, Inc

AX6601

300mALowDropout(LDO)LinearRegulator

?GENERALDESCRIPTION TheAX6601isa300mA,fixedoutputvoltage,lowdropoutlinearregulator.TheDeviceincludespasselement,erroramplifier,band-gap,current-limit,andthermalshutdowncircuitry.Thecharacteristicsoflowdropoutvoltageandlessquiescentcurrentmakeitgoodforsome

AXELITEAXElite technology co. ltd

亞瑟萊特亞瑟萊特科技股份有限公司

CEB6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6601

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CED6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6601

P-Channel60V(D-S)MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    ADRF6601-EVALZ

  • 制造商：

    Analog Devices Inc.

  • 類別：

    開發(fā)板，套件，編程器 > 射頻評(píng)估和開發(fā)套件，開發(fā)板

  • 包裝：

    散裝

  • 類型：

    混頻器

  • 頻率：

    300MHz ~ 2.5GHz

  • 配套使用/相關(guān)產(chǎn)品：

    ADRF6601

  • 所含物品：

    板

  • 描述：

    EVAL BOARD FOR ADRF6601

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Analog Devices
24+
EvaluationBoard
33680
ADI優(yōu)勢(shì)主營(yíng)型號(hào)-原裝正品
 詢價(jià)
AD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
ADI
20+
射頻元件
55
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
AD
1824+
NA
7
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ADI/亞德諾
21+
原封裝
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Analog Devices
23+
12500
詢價(jià)
ADI/亞德諾
22+
66900
原封裝
 詢價(jià)
AD
24+
9000
5000
原裝現(xiàn)貨
 詢價(jià)
ADI
22+
N/A
60000
專注配單,只做原裝現(xiàn)貨
 詢價(jià)
ADI
23+
N/A
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多ADRF6601-EVALZ供應(yīng)商 更新時(shí)間2025-5-18 14:14:00

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