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BAY135

SmallSignalSwitchingDiode,HighVoltage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAY135

200mAAxialLeadedSmallSignalSwitchingDiodes

Features ●SiliconPlanarDiode ●Verylowreversecurrent ●Lead(Pb)-freecomponent ●ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BAY135

SmallSignalFastSwitchingDiode,HighVoltage

FEATURES ?Siliconplanardiode ?Verylowreversecurrent ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS ?Protectioncircuits,delaycircuits

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAY135-TAP

SmallSignalSwitchingDiode,HighVoltage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAY135-TR

SmallSignalSwitchingDiode,HighVoltage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BB135

UHFVariableCapacitanceDiode

DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES ?Excellentlinearity ?VerysmallplasticSMDpackage. ?C28:1.9pF;ratio:10

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

BB135

UHFvariablecapacitancediode

DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES ?Excellentlinearity ?VerysmallplasticSMDpackage. ?C28:1.9pF;ratio:10

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BB135

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BCR135

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit,drivercircuit ?Builtinbiasresistor(R1=10k?,R2=47k?)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BCR135

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuitdrivercircuit ?Builtinbiasresistor(R1=10k?,R2=47k?) ?For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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AKM
23+
原廠原包
19960
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Assmann
22+
NA
2265
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Littelfuse(美國力特)
24+
插件
7350
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捷捷微
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AKS
68000
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捷捷微
23+
AKS
50000
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GLOBALTEST
2447
20
100500
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5000
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SUNNY
22+
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8200
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SUNNY
2022+
350
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SUNNY
25+
NA
880000
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