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零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
CEB1012	文件：371.97 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB1012L	文件：497.34 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB1012L	文件：379.91 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED1012	文件：379.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED1012L	文件：695.69 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP1012	文件：498.1 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP1012L	文件：497.34 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU1012	文件：379.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU1012L	文件：695.69 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CFA1012	文件：139.2 Kbytes Page：3 Pages	PNPSILICONPLANARPOWERTRANSISTOR PNPSILICONPLANARPOWERTRANSISTOR TO-220FPFullyIsolatedPlasticPackage ComplementaryCFC2562 HighCurrentSwitchingApplications	CDIL Continental Device India Limited	CDIL

零件編號(hào)

下載訂購(gòu)

功能描述/絲印

制造商上傳企業(yè)

LOGO

CEB1012

文件：371.97 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEB1012L

文件：497.34 Kbytes

Page：5 Pages

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEB1012L

文件：379.91 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CED1012

文件：379.29 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CED1012L

文件：695.69 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEP1012

文件：498.1 Kbytes

Page：5 Pages

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEP1012L

文件：497.34 Kbytes

Page：5 Pages

N-ChannelEnhancementModeFieldTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEU1012

文件：379.29 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEU1012L

文件：695.69 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CFA1012

文件：139.2 Kbytes

Page：3 Pages

PNPSILICONPLANARPOWERTRANSISTOR

PNPSILICONPLANARPOWERTRANSISTOR TO-220FPFullyIsolatedPlasticPackage ComplementaryCFC2562 HighCurrentSwitchingApplications

CDIL

Continental Device India Limited

CDIL

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