首頁 >BAS70-04WT/R>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Schottkybarrier(double)diodes ■Features ●FastSwitchingSpeed ●Highbreakdownvoltage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SMALLSIGNALSCHOTTKYDIODES DESCRIPTION Lowturn-onandhighbreakdownvoltagediodesintendedforultrafastswitchingandUHFdetectorsinhybridmicrocircuits. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
SurfaceMountSchottkyBarrierDiodes Features ?LowTurn–onVoltage ?FastSwitching ?PNJunctionGuardRingforTransientandESDProtection Applications ?Fastswitchesinthickandthinfilmcircuits ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Description 70mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection. FeaturesandBenefits ?LowTurn-OnVoltage ?FastSwitching ?PNJunctionGuardRingf | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
SchottkyDiodes FEATURES ?Thesediodesfeatureverylowturn-onvoltageandfastswitching. ?ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. | GE GE Industrial Company | GE | ||
SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclampingHigh-leveldetectingandmixing) Features ?HiRelDiscreteandMicrowaveSemiconductor ?General-purposediodesforhigh-speedswitching ?Circuitprotection ?Voltageclamping ?High-leveldetectingandmixing ?Hermeticallysealedmicrowavepackage ?eesaqualified ?ESA/SCCDetailSpec.No.:5512/020 | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
SurfacemountSchottky-BarrierSingle-/Double-Diodes ?Powerdissipation310mW ?Repetitivepeakreversevoltage70V ?PlasticcaseSOT-23 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled | Diotec Diotec Semiconductor | Diotec | ||
SiliconSchottkyDiode SiliconSchottkyDiode ?General-purposediodeforhigh-speedswitching ?Circuitprotection ?Voltageclamping ?High-leveldetectingandmixing | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Schottkybarrierdoublediodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Surfacemountschottkybarrierdiode FEATURES ?Lowturn-onvoltage.Pb ?Fastswitching.Lead-free ?PNJunctionguardringfortransientandESDprotection. ?Ultra-smallsurfacemountpackage. ?Alsoavailableinleadfreeversion. APPLICATIONS ?Highspeedswitchingapplications. ?Circuitprotecting. ?Voltageclamping. | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN |
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