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BDB106

SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIER

RECTRON

Rectron Semiconductor

BFR106

NPN5GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT23envelope.Itisprimarilyintendedforlownoise,generalRFapplications.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BFR106

NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersForlinearbroadbandamplifiers)

NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiers ?Forlinearbroadbandamplifiers ?Specialapplication:antennaamplifiers ?Complementarytype:BFR194(PNP)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR106

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?HighlinearitylownoiseRFtransistor ?22dBmOP1dBand31dBmOIP3@900MHz,8V,70mA ?ForUHF/VHFapplications ?Driverformultistageamplifiers ?Forlinearbroadbandandantennaamplifiers ?Collectordesignsupports5Vsupplyvoltage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

SiliconNPNRFTransistor

DESCRIPTION ?LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz ?HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS ?Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BFR106

LowNoiseFigure

DESCRIPTION ?LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz ?HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS ?Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFR106

NPN5GHzwidebandtransistor

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BGF106C

SIMCardInterfaceFilterandESDProtection

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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