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BTA312X

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT186Afullpackplasticpackage Features ■Veryhighcommutationperformancemaximizedateachgatesensitivity ■HighimmunitytodV/dt ■Highisolationvoltage Applications ■Highpowermotorcontrol-e.g.was

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BTA312Y

12AThree-quadranttriacshighcommutationinsulated

Generaldescription Passivated,newgeneration,highcommutationtriacsinaninternallyinsulatedTO-220plasticpackage Features ■Veryhighcommutationperformance ■HighimmunitytodV/dt ■Isolatedmountingbase ■2500VRMSisolationvoltage Applications ■Motorcontrol-e.g.washin

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BTM312

BluetoothModule

BUDDIESBUDDIES TECHNOLOGY LIMITED.

百事通科技百事通科技有限公司

BUL312FH

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideR.B.S.O.A. ■HIGHVOLTAGECAP

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BUL312FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUL312FPismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhigh switchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructurewithplanaredge terminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBULseriesisd

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BUL312FP

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=500V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=1A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BUP312

IGBT

?Lowforwardvoltagedrop ?Highswitchingspeed ?Lowtailcurrent ?Latch-upfree ?Avalancherated

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ312

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ312

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

C312

MONOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細參數(shù)

  • 型號：

    BL-L312UWC

  • 制造商：

    BETLUX

  • 制造商全稱：

    BetLux Electronics

  • 功能描述：

    Round Type LED lamp

供應(yīng)商型號品牌批號封裝庫存備注價格
BETLUX
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
BETLUX超亮藍
24+
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
BETLUX高明亮橙色
23+
100000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多BL-L312UWC供應(yīng)商 更新時間2025-5-23 19:49:00

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