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CEP540L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU540A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,25A,RDS(ON)=49m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU540L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU540L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,25A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,25A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,25A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM540ANPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE100VoltsCURRENT36Ampere FEATURE *Smallpackage.(D2PAK) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

CHM540APAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE100VoltsCURRENT25Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CD540E/KIT

  • 制造商：

    Teac

  • 功能描述：

    40X;IDE;PS2BZL;

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