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CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,47A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=21mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,47A,RDS(ON)=12mW@VGS=10V. RDS(ON)=21mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3100

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CP3100SC

SMBPlastic-EncapsulateDiodes

HDSEMIJiangsu High diode Semiconductor Co., Ltd

蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司

CR3100SA

TheCRrangeofprotectorsarebasedontheproventechnologyoftheT10thyristorproduct

Littelfuselittelfuse

力特力特公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CE3100-HSP

  • 制造商：

    RadiSys

  • 功能描述：

    C ORE 2 DUO COM EXPRESS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TDK
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
TDK
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
TDK
2016+
SMD
6523
只做原裝正品現(xiàn)貨!或訂貨!
 詢價(jià)
TDK
24+
1500
詢價(jià)
TDK
24+
SOP
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢價(jià)
TDK
2016+
SMD
3500
本公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
TDK/東電化
2022+
146
全新原裝 貨期兩周
 詢價(jià)
TDK
23+
SMD
10500
全新原裝現(xiàn)貨,假一賠十
 詢價(jià)
TDK/東電化
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
TDK/東電化
22+
SMD
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
更多CE3100-HSP供應(yīng)商 更新時(shí)間2025-5-19 17:11:00

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