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CED4311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-9.3A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4311

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

CEM4311

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?LoadSwitch ?BatterySwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CEM4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-9.3A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=30mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4311

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CEU4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM4311JPT

P-ChannelEnhancementModeFieldEffectTransistor

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細參數(shù)

  • 型號：

    CED4311

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    P-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
CET
12+
TO-251
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
SR
23+
TO-251
5000
原裝正品,假一罰十
 詢價
CET
1822+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
CET
18+
TO-251
41200
原裝正品,現(xiàn)貨特價
 詢價
CET/華瑞
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022+
TO-251
2620
原廠代理 終端免費提供樣品
 詢價
C
23+
TO-251
6000
原裝正品，支持實單
 詢價
VBsemi
21+
TO251
10065
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CET/華瑞
24+
NA/
2365
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
CET
23+
TO-251
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多CED4311供應商 更新時間2025-5-7 11:04:00

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