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DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551

Plastic-EncapsulateTransistors

Features ?SurfaceMountSOT-363Package ?200mWattsofPowerDissipation ?IdealforMediumPowerAmplificationandSwitching ?CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 ?Marking:K4R

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(DMMT5401) ?IdealforLowPowerAmplificationandSwitching ?IntrinsicallyMatchedNPNPair(Note1) ?2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) ?LeadFree/RoHSCompliant(Note4) ?GreenDevice(Note5an

DIODES

Diodes Incorporated

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551-TP

Plastic-EncapsulateTransistors

Features ?SurfaceMountSOT-363Package ?200mWattsofPowerDissipation ?IdealforMediumPowerAmplificationandSwitching ?CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 ?Marking:K4R

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

DXT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

DCCOM

Dc Components

DXT5551

160VNPNTRANSISTOR

DIODES

Diodes Incorporated

DZT5551

NPNSURFACEMOUNTTRANSISTOR

Features ?BVCEO>160V ?BVEBO>6V ?IC=600mAContinuousCollectorCurrent ?LowSaturationVoltage(150mVmax@10mA) ?hFEspecifiedupto50mAforahighgainholdup ?ComplementaryPNPType:DZT5401 ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnti

DIODES

Diodes Incorporated

DZT5551Q

160VNPNVOLTAGETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>160V ?BVEBO>6V ?IC=600mAContinuousCollectorCurrent ?LowSaturationVoltage(150mVmax@10mA) ?hFEspecifiedupto50mAforahighgain

DIODES

Diodes Incorporated

E5551

HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

詳細參數(shù)

  • 型號:

    CMBT5551T/-W

  • 功能描述:

    兩極晶體管 - BJT NPN 0.6A 160V HV

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
三年內(nèi)
1983
只做原裝正品
詢價
空白
SOT-23
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
華昕
23+
20000
正品原裝貨價格低
詢價
CDIL
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
CDIL
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
CENTRAL
24+
SOT-23
66200
新進庫存/原裝
詢價
GENERAL
24+
SOT-23
90000
進口原裝現(xiàn)貨假一罰十價格合理
詢價
CDIL
25+
SOT-23SC-59
9000
原裝正品,假一罰十!
詢價
SUMIDDA
24+
SMD
11016
公司現(xiàn)貨庫存,支持實單
詢價
CERTIRED
24+
SOT-23SC-59
5000
只做原裝公司現(xiàn)貨
詢價
更多CMBT5551T/-W供應(yīng)商 更新時間2025-5-24 15:08:00