高潮又爽又大又黄无遮挡免费,一区二区三区人妻

零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
FDB302	文件：256.829 Kbytes Page：1 Pages	3AMPFASTRECOVERYBRIDGERECTIFIERS	DEC DIOTEC Electronics Corporation	DEC
FDN302	文件：103.44 Kbytes Page：5 Pages	P-Channel2.5VSpecifiedPowerTrenchMOSFET GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features ?–20V,–2.4A.Rds(on)=0.055?@	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDN302P	文件：103.44 Kbytes Page：5 Pages	P-Channel2.5VSpecifiedPowerTrenchMOSFET GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features ?–20V,–2.4A.Rds(on)=0.055?@	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDN302P	文件：1.83652 Mbytes Page：34 Pages	ContainsallsupportcircuitryneededfortheADS1148/ADS1248	TI1Texas Instruments 德州儀器美國(guó)德州儀器公司	TI1
FDN302P	文件：2.33022 Mbytes Page：27 Pages	ContainsallsupportcircuitryneededfortheADS1146/ADS1246	TI1Texas Instruments 德州儀器美國(guó)德州儀器公司	TI1
FDN302P	文件：12.00579 Mbytes Page：6 Pages	P-ChannelEnhancement-ModeMOSFETs ProductSummary Vps=-20V,Ip=-3A Rosion)	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
FDN302P	文件：309.77 Kbytes Page：5 Pages	P-Channel2.5V(D-S)MOSFET Features ?–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=80mΩ@VGS=–2.5V ?Fastswitchingspeed ?Highperformancetrenchtechnologyforextremely lowRDS(ON) ?SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23inthesame footprint	UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司	UMW
FDN302P	文件：295.31 Kbytes Page：5 Pages	P-Channel2.5V(D-S)MOSFET GeneralDescription ThisP-Channel2.5Vhasbeenoptimizedforpower managementapplicationswithawiderangeofgate drivevoltage(2.5V–12V). Applications ?Powermanagement ?Loadswitch ?Batteryprotection Features ?–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
FDN302P-NL	文件：1.04078 Mbytes Page：9 Pages	P-Channel20-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
FDV302	文件：63.55 Kbytes Page：4 Pages	DigitalFET,P-Channel GeneralDescription ThisP-ChannellogiclevelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyfor	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

零件編號(hào)

下載訂購(gòu)

功能描述/絲印

制造商上傳企業(yè)

LOGO

FDB302

文件：256.829 Kbytes

Page：1 Pages

3AMPFASTRECOVERYBRIDGERECTIFIERS

DEC

DIOTEC Electronics Corporation

DEC

FDN302

文件：103.44 Kbytes

Page：5 Pages

P-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features ?–20V,–2.4A.Rds(on)=0.055?@

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

FDN302P

文件：103.44 Kbytes

Page：5 Pages

P-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features ?–20V,–2.4A.Rds(on)=0.055?@

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

FDN302P

文件：1.83652 Mbytes

Page：34 Pages

ContainsallsupportcircuitryneededfortheADS1148/ADS1248

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TI1

FDN302P

文件：2.33022 Mbytes

Page：27 Pages

ContainsallsupportcircuitryneededfortheADS1146/ADS1246

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TI1

FDN302P

文件：12.00579 Mbytes

Page：6 Pages

P-ChannelEnhancement-ModeMOSFETs

ProductSummary Vps=-20V,Ip=-3A Rosion)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

TECHPUBLIC

FDN302P

文件：309.77 Kbytes

Page：5 Pages

P-Channel2.5V(D-S)MOSFET

Features ?–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=80mΩ@VGS=–2.5V ?Fastswitchingspeed ?Highperformancetrenchtechnologyforextremely lowRDS(ON) ?SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23inthesame footprint

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

UMW

FDN302P

文件：295.31 Kbytes

Page：5 Pages

P-Channel2.5V(D-S)MOSFET

GeneralDescription ThisP-Channel2.5Vhasbeenoptimizedforpower managementapplicationswithawiderangeofgate drivevoltage(2.5V–12V). Applications ?Powermanagement ?Loadswitch ?Batteryprotection Features ?–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

EVVOSEMI

FDN302P-NL

文件：1.04078 Mbytes

Page：9 Pages

P-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBSEMI

FDV302

文件：63.55 Kbytes

Page：4 Pages

DigitalFET,P-Channel

GeneralDescription ThisP-ChannellogiclevelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyfor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市亞泰盈科電子有限公司	EVKT-5416	MPS/芯源	2025+		46519		詢價(jià)
深圳市德力誠(chéng)信科技有限公司	EVKT-MP2723A	MONOLITHIC POWER SYSTEMS (MPS)	24+	con	2000	優(yōu)勢(shì)庫(kù)存,原裝正品	詢價(jià)

相關(guān)規(guī)格書(shū)

相關(guān)庫(kù)存