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MIS6306

N-Channel30V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NAS6306

NATIONALAEROSPACESTANDARD

ETCList of Unclassifed Manufacturers

未分類制造商

NX6306

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6306Seriesisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitor PIN-PD.ThisdeviceisidealforGigabitEthernetandSynchronousDigital Hi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX6306

1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS

CEL

California Eastern Labs

NX6306GH

1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS

CEL

California Eastern Labs

NX6306GH

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6306Seriesisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitor PIN-PD.ThisdeviceisidealforGigabitEthernetandSynchronousDigital Hi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX6306GK

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6306Seriesisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitor PIN-PD.ThisdeviceisidealforGigabitEthernetandSynchronousDigital Hi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX6306GK

1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS

CEL

California Eastern Labs

NX6306SH

1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS

CEL

California Eastern Labs

NX6306SH

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6306Seriesisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitor PIN-PD.ThisdeviceisidealforGigabitEthernetandSynchronousDigital Hi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    FDG6306P_Q

  • 功能描述：

    MOSFET P-Ch PowerTrench Specified 2.5V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Fairchild
23+
SC70-6
7750
全新原裝優(yōu)勢
 詢價
FAIRCHILD/仙童
22+
SOT-363
20000
保證原裝正品,假一陪十
 詢價
FAIRCHILD/仙童
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
17+
SOT-363
1000
進(jìn)口原裝現(xiàn)貨假一賠萬力挺實單
 詢價
FAIRCHILD/仙童
25+
SOT-363
54558
百分百原裝現(xiàn)貨 實單必成 歡迎詢價
 詢價
ON/安森美
24+
SC70-6
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
FAIRCILD
22+
SC70-6
8000
原裝正品支持實單
 詢價
ON/安森美
24+
NA/
13255
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
FAIRCHILD/仙童
24+
SC70-6
60000
詢價
FAIRCHILD仙童
23+
SOT367
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多FDG6306P_Q供應(yīng)商 更新時間2025-5-27 17:40:00

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