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FRM130R

14A,100V,0.180Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS130D

12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS130H

12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS130R

12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRX130D

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130H

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130R

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FSL130D

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL130R

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSLH-S130C

2012Size1200/1400MHzChipMultilayerSplitter/Combiner

HITACHI-METALSHitachi Metals, Ltd

日立金屬日立金屬有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
臺灣遠翔
23+
SOT23-5
60000
代理原裝現(xiàn)貨,假一賠十
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FEELING
2016+
SOT23-5
6532
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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FEELING
1815+
SOT-23
6528
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FEELING
21+
42664
12588
原裝正品假一罰十
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24+
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20000
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 詢價
Feeling Technology(臺灣遠翔)
2021+
SOT23-5L
549
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FEELING
23+
SOT353
50000
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FEELING TECHNOLOGY
21+
N/A
2500
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SOT23-5
1855
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3000
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更多FP130AKR-LF供應(yīng)商 更新時間2025-5-22 17:07:00

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