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PHB45N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB45N03LTA

N-channelenhancementmodefield-effecttransistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB45N03LTA

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU ??????? APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHB45N03T

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHB45N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticsuitableforsurfacemountingenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD45N03LTA

N-channelenhancementmodefield-effecttransistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD45N03LTA

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHP45N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP45N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP45N03LTissuppl

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP45N03LTA

N-channelenhancementmodefield-effecttransistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào)：

    FQB45N03LTM

  • 功能描述：

    MOSFET TO-263

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原裝正品代理渠道價(jià)格優(yōu)勢
 詢價(jià)
FAIRCHILD/仙童
21+
D2-PAKTO-263
30000
優(yōu)勢供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅
 詢價(jià)
FAIRCHILD/仙童
22+
D2-PAKTO-263
18000
原裝正品
 詢價(jià)
FAIRCHILD/仙童
25+
D2-PAKTO-263
54558
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià)
 詢價(jià)
FSC
18+
TO-263
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
FAIRCHILD/仙童
24+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
仙童
06+
TO-263
3500
原裝
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHIL
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
SAMHOP/三合微科
23+
SOP-8
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
更多FQB45N03LTM供應(yīng)商 更新時(shí)間2025-5-19 16:00:00

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