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GRF2011

BroadbandLinearGainBlock0.05to3.8GHz

GUERRILLA

Guerrilla RF, Inc.

GRHI-2011

ASSEMBLYDRAWINGHIGHIMPACTROCKERSWITCH1.124x.550PANEL

CWIND

CW Industries

H2011U

4&6TumblerPowerSwitchlocks

Features/Benefits ?Positivedetent ?Multi-poleandmulti-position ?Snap-togetherassembly ?Powerswitching

CK-COMPONENTS

C&K Components

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號:

    FTD2011

  • 制造商:

    SANYO

  • 制造商全稱:

    Sanyo Semicon Device

  • 功能描述:

    Load Switching Applications

供應(yīng)商型號品牌批號封裝庫存備注價格
SANYO
16+
MSOP
1033
全新原裝現(xiàn)貨
詢價
S
20+
TSSOP8
2960
誠信交易大量庫存現(xiàn)貨
詢價
SANYO
1709+
TSSOP-8
32500
普通
詢價
SANYO/三洋
23+
TSSOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
三洋
05+
TSSOP-8
49
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
SANYO/三洋
2023+
MSOP
1033
專注全新正品,優(yōu)勢現(xiàn)貨供應(yīng)
詢價
SANYO/三洋
22+
TSSOP8
25000
只有原裝絕對原裝,支持BOM配單!
詢價
SANYO/三洋
24+
NA/
100
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
SANYO
23+
TSSOP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
SANYO
23+
TSSOP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
更多FTD2011供應(yīng)商 更新時間2025-5-21 10:01:00