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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
MDP11N60	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.03328 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
MDP11N60TH	文件：332.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDP11N60TH	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MGP11N60E	文件：120.21 Kbytes Page：5 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MGP11N60E	文件：123.51 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
MGP11N60ED	文件：145.87 Kbytes Page：6 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
OM11N60	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
OM11N60SA	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
OM11N60SA	文件：35.79 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They	IRF International Rectifier	IRF

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

MDP11N60

文件：1.04564 Mbytes

Page：6 Pages

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MGCHIP

MDP11N60

文件：1.03328 Mbytes

Page：8 Pages

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBSEMI

MDP11N60TH

文件：332.35 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

MDP11N60TH

文件：1.04564 Mbytes

Page：6 Pages

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MGCHIP

MGP11N60E

文件：120.21 Kbytes

Page：5 Pages

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ONSEMI

MGP11N60E

文件：123.51 Kbytes

Page：6 Pages

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

Motorola

MGP11N60ED

文件：145.87 Kbytes

Page：6 Pages

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ONSEMI

OM11N60

文件：33.32 Kbytes

Page：4 Pages

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

etc2

OM11N60SA

文件：33.32 Kbytes

Page：4 Pages

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

etc2

OM11N60SA

文件：35.79 Kbytes

Page：4 Pages

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRF

International Rectifier

IRF

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
艾睿國際（香港）有限公司	GC11N65F	GOFORD(谷峰)	2447	TO-220F	105000	50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期	詢價
深圳市星宇佳科技有限公司	GC11N65F	GOFORD(谷峰)	20+	TO-220F-3	50		詢價
現(xiàn)代芯城（深圳）科技有限公司	GC11N65F		24+	N/A	46000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市威雅利發(fā)展有限公司	GC11N65K	GOFORD	2007202208	TO-252	2500	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市南科功率半導(dǎo)體有限公司	GC11N65K	NK/南科功率	2025+	TO-252	986966	國產(chǎn)	詢價
深圳市賽爾通科技有限公司	GC12/4BANZEIGE		23+		65480		詢價
千層芯半導(dǎo)體(深圳)有限公司	GC-12/A83475A-AW	ELECTROMED	24+	SMD	20000	一級代理原裝現(xiàn)貨假一罰十	詢價
深圳市粵駿騰電子科技有限公司	GC-12/A83475A-AW	ELECTROMED	24+	SOP24	41	大批量供應(yīng)優(yōu)勢庫存熱賣	詢價
深圳市創(chuàng)新跡電子有限公司	GC120	N/A	23+		80000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	GC120	N/A	23+		80000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價

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