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零件編號(hào)	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
IL020	文件：481 Kbytes Page：2 Pages	AdmiralClass-LeadWires	ENSIGN Ensign Corporation	ENSIGN
IMC020FLSA	文件：548.17 Kbytes Page：39 Pages	SERIES2FLASHMEMORYCARDSiMC002FLSA,iMC004FLSA,iMC010FLSA,iMC020FLSA Intel’sSeries2FlashMemoryCardfacilitateshigh-performancediskemulationinmobilePCsanddedicatedequipment.ManufacturedwithIntel’sETOXTMIII0.8m,FlashFileMemorydevices,theSeries2Cardallowscodeanddataretentionwhileerasingand/orwritingotherblocks.Additionally,theS	IntelIntel Corporation 英特爾	Intel
IRCO-020	文件：286.62 Kbytes Page：1 Pages	UnsheathedFineGageThermocouples	OMEGA OMEGA Engineering	OMEGA
IRFD020	文件：238.94 Kbytes Page：6 Pages	HEXFETTRANSISTORSN-CHANNELHEXDIP 50Volt,0.10Ohm,1-WattHEXDIP HEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedevicerugg	IRF International Rectifier	IRF
IRFD020	文件：222.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020	文件：246.45 Kbytes Page：9 Pages	PowerMOSFET	TFUNKVishay Telefunken 威世威世（VISHAY）集團(tuán)	TFUNK
IRFD020	文件：248.45 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Forautomaticinsertion ?Compact,endstackable ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadva	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020PBF	文件：222.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020PBF	文件：248.45 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：1.71489 Mbytes Page：9 Pages	HEXFETRPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq	IRF International Rectifier	IRF

零件編號(hào)

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

IL020

文件：481 Kbytes

Page：2 Pages

AdmiralClass-LeadWires

ENSIGN

Ensign Corporation

ENSIGN

IMC020FLSA

文件：548.17 Kbytes

Page：39 Pages

SERIES2FLASHMEMORYCARDSiMC002FLSA,iMC004FLSA,iMC010FLSA,iMC020FLSA

Intel’sSeries2FlashMemoryCardfacilitateshigh-performancediskemulationinmobilePCsanddedicatedequipment.ManufacturedwithIntel’sETOXTMIII0.8m,FlashFileMemorydevices,theSeries2Cardallowscodeanddataretentionwhileerasingand/orwritingotherblocks.Additionally,theS

IntelIntel Corporation

英特爾

Intel

IRCO-020

文件：286.62 Kbytes

Page：1 Pages

UnsheathedFineGageThermocouples

OMEGA

OMEGA Engineering

OMEGA

IRFD020

文件：238.94 Kbytes

Page：6 Pages

HEXFETTRANSISTORSN-CHANNELHEXDIP

50Volt,0.10Ohm,1-WattHEXDIP HEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedevicerugg

IRF

International Rectifier

IRF

IRFD020

文件：222.71 Kbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFD020

文件：246.45 Kbytes

Page：9 Pages

PowerMOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

TFUNK

IRFD020

文件：248.45 Kbytes

Page：9 Pages

PowerMOSFET

FEATURES ?Forautomaticinsertion ?Compact,endstackable ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadva

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFD020PBF

文件：222.71 Kbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFD020PBF

文件：248.45 Kbytes

Page：9 Pages

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFR020

文件：1.71489 Mbytes

Page：9 Pages

HEXFETRPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq

IRF

International Rectifier

IRF

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深圳市宏世佳電子科技有限公司	GED003	INFINEON	2025+	SOP-28	3645	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售	詢價(jià)
標(biāo)準(zhǔn)國際(香港)有限公司	GED0511-H	GED0511-H		16	16		詢價(jià)

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