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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
IRF360	文件：137.12 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor DESCRIPTION ?siliconGateforfastswitchingatelevate ?rugged APPLICATIONS ?suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioamplifiersandhighenergypulsecircuits.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司	NJSEMI
IRF360	文件：329.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioampl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFI360	文件：210.18 Kbytes Page：8 Pages	TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A) HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET	IRF International Rectifier	IRF
IRFI360	文件：214.2 Kbytes Page：8 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFM360	文件：514.669 Kbytes Page：7 Pages	400V,N-CHANNELHEXFETMOSFETTECHNOLOGY HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s	IRF International Rectifier	IRF
IRFM360	文件：253.7 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFM360	文件：372.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFP360	文件：55.31 Kbytes Page：7 Pages	23A,400V,0.200Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc	Intersil Intersil Corporation	Intersil
IRFP360	文件：164.15 Kbytes Page：6 Pages	PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)	IRF International Rectifier	IRF
IRFP360	文件：962.94 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

IRF360

文件：137.12 Kbytes

Page：2 Pages

N-ChannelMOSFETTransistor

DESCRIPTION ?siliconGateforfastswitchingatelevate ?rugged APPLICATIONS ?suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioamplifiersandhighenergypulsecircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

NJSEMI

IRF360

文件：329.19 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioampl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISC

IRFI360

文件：210.18 Kbytes

Page：8 Pages

TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET

IRF

International Rectifier

IRF

IRFI360

文件：214.2 Kbytes

Page：8 Pages

SimpleDriveRequirements

IRF

International Rectifier

IRF

IRFM360

文件：514.669 Kbytes

Page：7 Pages

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRF

IRFM360

文件：253.7 Kbytes

Page：7 Pages

SimpleDriveRequirements

IRF

International Rectifier

IRF

IRFM360

文件：372.36 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISC

IRFP360

文件：55.31 Kbytes

Page：7 Pages

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

Intersil

IRFP360

文件：164.15 Kbytes

Page：6 Pages

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRF

International Rectifier

IRF

IRFP360

文件：962.94 Kbytes

Page：8 Pages

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

Vishay

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深圳市仟禧電子有限公司	HCS360T/SN	MICROCHIP/微芯	22+	sopdipqfp	20000	保證原裝正品,假一陪十	詢價
深圳市永貝爾科技有限公司	HCS360T/SN	MICROCHIP/微芯	23+	8SOIC	35200	只做原裝主打品牌QQ詢價有詢必回	詢價
艾睿國際（香港）有限公司	HCS360T/SN	MICROCHIP(美國微芯)	2447	SOIC-8	31500	3300個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,	詢價

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