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IRF1010EZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZSPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSTRLP

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF1010N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010NL

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NL

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NLPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    HN-1010

  • 功能描述：

    射頻模塊 HopNet 10 Series Outdoor/Weatherproof

  • RoHS：

    否

  • 制造商：

    Linx Technologies

  • 產(chǎn)品：

    Transceiver Modules

  • 頻帶：

    902 MHz to 928 MHz

  • 輸出功率：

    - 15.5 dBm to + 12.5 dBm

  • 接口類型：

    UART

  • 工作電源電壓：

    - 0.3 VDC to + 5.5 VDC

  • 傳輸供電電流：

    38.1 mA

  • 接收供電電流：

    22.7 mA

  • 天線連接器類型：

    U.FL

  • 最大工作溫度：

    + 85 C

  • 尺寸：

    1.15 mm x 0.63 mm x 0.131 mm

供應商型號品牌批號封裝庫存備注價格
2017+
SMD
1585
只做原裝正品假一賠十!
 詢價
RFM
24+
SMD
5000
RFM專營品牌原裝正品假一罰十
 詢價
MURATA
20+
射頻元件
19
就找我吧!--邀您體驗愉快問購元件!
 詢價
MINGTEK
2016+
SOP
8850
只做原裝,假一罰十,公司專營變壓器,濾波器!
 詢價
MINGTEK
1736+
SOP
15238
原廠優(yōu)勢渠道
 詢價
MINGTEK
2022+
SOP
90000
原廠原盒現(xiàn)貨,年底清倉大特價!送
 詢價
MINGTEK
2447
SOP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
TOSHIBA
24+
SOT-363SOT-323-6
6200
新進庫存/原裝
 詢價
TOSHIBA/東芝
23+
SOT-363
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
TOSHIBA
23+
SOT-363
48557
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
更多HN-1010供應商 更新時間2025-5-8 17:31:00

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