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零件編號(hào)	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
IRFI360	文件：210.18 Kbytes Page：8 Pages	TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A) HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET	IRF International Rectifier	IRF
IRFI360	文件：214.2 Kbytes Page：8 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFM360	文件：514.669 Kbytes Page：7 Pages	400V,N-CHANNELHEXFETMOSFETTECHNOLOGY HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s	IRF International Rectifier	IRF
IRFM360	文件：253.7 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFM360	文件：372.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFP360	文件：55.31 Kbytes Page：7 Pages	23A,400V,0.200Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc	Intersil Intersil Corporation	Intersil
IRFP360	文件：164.15 Kbytes Page：6 Pages	PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)	IRF International Rectifier	IRF
IRFP360	文件：962.94 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP360	文件：50.32 Kbytes Page：2 Pages	MegaMOSFET Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva	IXYS IXYS Corporation	IXYS
IRFP360	文件：67.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

零件編號(hào)

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

IRFI360

文件：210.18 Kbytes

Page：8 Pages

TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET

IRF

International Rectifier

IRF

IRFI360

文件：214.2 Kbytes

Page：8 Pages

SimpleDriveRequirements

IRF

International Rectifier

IRF

IRFM360

文件：514.669 Kbytes

Page：7 Pages

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRF

IRFM360

文件：253.7 Kbytes

Page：7 Pages

SimpleDriveRequirements

IRF

International Rectifier

IRF

IRFM360

文件：372.36 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

IRFP360

文件：55.31 Kbytes

Page：7 Pages

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

Intersil

IRFP360

文件：164.15 Kbytes

Page：6 Pages

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRF

International Rectifier

IRF

IRFP360

文件：962.94 Kbytes

Page：8 Pages

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFP360

文件：50.32 Kbytes

Page：2 Pages

MegaMOSFET

Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva

IXYS

IXYS Corporation

IXYS

IRFP360

文件：67.83 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

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