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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
IRFG110	文件：273.04 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(MO-036AB)	IRF International Rectifier	IRF
IRFL110	文件：244.59 Kbytes Page：8 Pages	PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRF International Rectifier	IRF
IRFL110	文件：1.45555 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL110PBF	文件：216.93 Kbytes Page：8 Pages	HEXFETPowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRF International Rectifier	IRF
IRFL110PBF	文件：1.45555 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL110TR	文件：1.45555 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL110TRPBF	文件：1.45555 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL110TRPBF	文件：1.46639 Mbytes Page：6 Pages	N-Channel100-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
IRFL110TRPBFA	文件：2.02105 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFM110A	文件：263.83 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

IRFG110

文件：273.04 Kbytes

Page：7 Pages

POWERMOSFETTHRU-HOLE(MO-036AB)

IRF

International Rectifier

IRF

IRFL110

文件：244.59 Kbytes

Page：8 Pages

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRF

IRFL110

文件：1.45555 Mbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

Vishay

IRFL110PBF

文件：216.93 Kbytes

Page：8 Pages

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRF

IRFL110PBF

文件：1.45555 Mbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

Vishay

IRFL110TR

文件：1.45555 Mbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

Vishay

IRFL110TRPBF

文件：1.45555 Mbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

Vishay

IRFL110TRPBF

文件：1.46639 Mbytes

Page：6 Pages

N-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBSEMI

IRFL110TRPBFA

文件：2.02105 Mbytes

Page：9 Pages

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

Vishay

IRFM110A

文件：263.83 Kbytes

Page：7 Pages

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

Fairchild

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深圳市美思瑞電子科技有限公司	IJ1521201	IMPINJ	22+	QFN	5994	現(xiàn)貨,原廠原裝假一罰十!	詢價
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瀚佳科技(深圳)有限公司	IJ5-01-05.0-L-S-1-TR	SAMTEC/申泰	24+		65200		詢價
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