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IRF121

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF121

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導體

IRF121

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF121

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF121

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF121

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF121

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF121

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFD121

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFF121

N-ChannelEnhancement-ModePowerMOSField-EffectTransistors

5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

供應商型號品牌批號封裝庫存備注價格
Deutsch
2022+
connector
60000
專注軍用/航空連接器,十五年優(yōu)質(zhì)供應商!
 詢價
Deutsch
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Deutsch
24+
con
969
優(yōu)勢庫存,原裝正品
 詢價
DALE
23+
65480
詢價
VIS
2447
CAP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VISHAY
05+
原廠原裝
2374
只做全新原裝真實現(xiàn)貨供應
 詢價
DALE
新
7984
全新原裝 貨期兩周
 詢價
VISHAY/威世
25+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
VISHAY
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
Vishay
06+
1970
優(yōu)勢貨源原裝正品
 詢價
更多IMC-121FB-SS-SC供應商 更新時間2025-5-19 14:00:00

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