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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
IRFL210TRPBF	文件：1.06848 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL210TRPBF	文件：1.81988 Mbytes Page：8 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
IRFL210TRPBFA	文件：171.96 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL210TRPBF-TP	文件：992.24 Kbytes Page：3 Pages	N-ChannelMOSFET200V,6.0A,0.65Q Features ?Vos=200v +o=60A +Rosin50650@Ves=10V.	TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司	TECHPUBLIC
IRFM210	文件：705.26 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFM210A	文件：269.52 Kbytes Page：7 Pages	AdvancedPowerMOSFET(200V,1.5ohm,0.77A) FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFM210B	文件：705.26 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFNL210B	文件：680.04 Kbytes Page：8 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR210	文件：171.11 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=2.6A) DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh	IRF International Rectifier	IRF
IRFR210	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

IRFL210TRPBF

文件：1.06848 Mbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFL210TRPBF

文件：1.81988 Mbytes

Page：8 Pages

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBSEMI

IRFL210TRPBFA

文件：171.96 Kbytes

Page：8 Pages

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFL210TRPBF-TP

文件：992.24 Kbytes

Page：3 Pages

N-ChannelMOSFET200V,6.0A,0.65Q

Features ?Vos=200v +o=60A +Rosin50650@Ves=10V.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

TECHPUBLIC

IRFM210

文件：705.26 Kbytes

Page：8 Pages

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

IRFM210A

文件：269.52 Kbytes

Page：7 Pages

AdvancedPowerMOSFET(200V,1.5ohm,0.77A)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

IRFM210B

文件：705.26 Kbytes

Page：8 Pages

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

IRFNL210B

文件：680.04 Kbytes

Page：8 Pages

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

IRFR210

文件：171.11 Kbytes

Page：6 Pages

PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=2.6A)

DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh

IRF

International Rectifier

IRF

IRFR210

文件：2.39965 Mbytes

Page：8 Pages

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
中天科工半導(dǎo)體（深圳）有限公司	INA210BIRSWT	Texas Instruments	24+	10-UFQFN	25000	in stock線性IC-原裝正品	詢價
深圳市高捷芯城科技有限公司	INA210BIRSWT	TI(德州儀器)	24+	QFN-10(1	1083	深耕行業(yè)12年,可提供技術(shù)支持。	詢價
瀚佳科技(深圳)有限公司	INA210BIRSWT	Texas Instruments	24+	10-UQFN(1.8x1.4)	53200	一級代理/放心采購	詢價
艾睿國際（香港）有限公司	INA210BIRSWT	TI(德州儀器)	2447	UQFN-10(1.8x1.4)	315000	250個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長	詢價
深圳市科雨電子有限公司	INA210BIRSWT	TI	20+	QFN-10	500	就找我吧!--邀您體驗愉快問購元件!	詢價
訊運(深圳/上海)電子有限公司	INA210BIRSWT	TI(德州儀器)	2021+	UQFN-10(1.8x1.4)	499		詢價
深圳市威爾健半導(dǎo)體有限公司	INA210BIRSWT	TI/德州儀器	23+	QFN	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市河鋒鑫科技有限公司	INA210BIRSWT	TI	22+	10UQFN	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	INA210BIRSWT	TI	21+	10UQFN	13880	公司只售原裝,支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	INA210BIRSWT	TI	23+	10UQFN	9000	原裝正品，支持實單	詢價

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