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INA214CIRSWR

INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

TI1Texas Instruments

德州儀器

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

TI1Texas Instruments

德州儀器

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional

TI1Texas Instruments

德州儀器

IRFD214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A)

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214PBF

HEXFETPowerMOSFET

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214PBF

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL214

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.79A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolder

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    INA214BIRSWT

  • 制造商：

    Texas Instruments

  • 功能描述：

    Revision B of existing INA214BIRSW

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Texas Instruments
24+
10-UFQFN
25000
in stock線性IC-原裝正品
 詢價(jià)
TI(德州儀器)
2022+原裝正品
UQFN-10(1.8x1.4)
18000
支持工廠BOM表配單 公司只做原裝正品貨
 詢價(jià)
TI(德州儀器)
24+
QFN-10(1
1083
深耕行業(yè)12年,可提供技術(shù)支持。
 詢價(jià)
Texas Instruments
24+
10-UQFN(1.8x1.4)
53200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
TI/德州儀器
23+
10-UQFN
3040
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
TI(德州儀器)
2447
UQFN-10(1.8x1.4)
315000
250個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
 詢價(jià)
TI
20+
QFN-10
500
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
TI(德州儀器)
2021+
UQFN-10(1.8x1.4)
499
詢價(jià)
TI/德州儀器
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
TI
22+
10UQFN
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
更多INA214BIRSWT供應(yīng)商 更新時(shí)間2025-5-7 17:26:00

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