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IRF1010NPBF規(guī)格書詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF1010NPBF
- 功能描述：
MOSFET MOSFT 55V 72A 11mOhm 80nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-220 |
27500 |
原裝正品,價格最低! |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
IR |
24+ |
TO220 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
1948+ |
TO220 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
07+ |
原廠原裝 |
20000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
Infineon Technologies |
24+ |
TO-220AB |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
IR/INFINEON |
2022+ |
TO-220 |
57550 |
詢價 | |||
IR |
23+ |
TO-220 |
65400 |
詢價 | |||
Infineon/英飛凌 |
24+ |
TO-220-3 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 |
