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IRFI540G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540G

SinktoLeadCreepageDistance=4.8mm

DESCRIPTION TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplications.Themoldingcompoundusedprovidesahighisolationcapabilityandalowthermalresistancebetweenthetabandexternalheatsink.Thisisolationisequivalenttousinga1

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI540G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540GPBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI540GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540GPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFI540GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540N

PowerMOSFET(Vdss=100V,Rds(on)=0.052ohm,Id=20A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFI540NPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI540NPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IRF540STRL

  • 功能描述：

    MOSFET N-Chan 100V 28 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
VISHAY
15+
原廠原裝
3200
進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
VISHAY/威世
24+
TO-263
183
只做原廠渠道 可追溯貨源
 詢價
VISHAY(威世)
24+
TO-263
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
24+
TO-263
501304
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
DISCRETE
800
SIX
3200
詢價
IR
23+
TO-263(D
7300
專業(yè)優(yōu)勢供應(yīng)
 詢價
NA
19+
74567
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IR
15+
TO-263
800
現(xiàn)貨
 詢價
更多IRF540STRL供應(yīng)商 更新時間2025-5-24 14:14:00

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