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IRFS640A

RuggedGateOxideTechnology

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowerRDS(ON):0.144(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS640A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS640B

200VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenminimizeon-stateresistance,providesuperiorswitchingespeciallytailoredtominimizeon-stateresistance,provid

TGS

Tiger Electronic Co.,Ltd

IRFS640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRFW640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL640

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640

HEXFETPowerMOSFET

IRF

International Rectifier

IRL640

HEXFETPowerMosfet

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

詳細(xì)參數(shù)

  • 型號：

    IRF640STRL

  • 功能描述：

    MOSFET N-Chan 200V 18 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
14
只做原廠渠道 可追溯貨源
 詢價
IR
06+
TO-263
14
深圳原裝進(jìn)口現(xiàn)貨
 詢價
IR
24+
TO-263
36800
詢價
INTERNATIONA
05+
原廠原裝
11112
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
IR
23+
TO-263
9500
專業(yè)優(yōu)勢供應(yīng)
 詢價
IR
17+
TO-263
6200
詢價
IR
25+23+
TO-263
14625
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
IR
23+
TO-263
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
IR
1923+
TO-263
6896
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
更多IRF640STRL供應(yīng)商 更新時間2025-5-16 16:36:00

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