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IRFI730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI730G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導體

IRFI730G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI730GPBF

HEXFETPowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRFI730GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導體

IRFI730GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFS730

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

IRFS730

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS730

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS730A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=400V ■LowerRDS(ON):0.765Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    IRF730STRL

  • 功能描述:

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
36800
詢價
IR
05+
原廠原裝
50051
只做全新原裝真實現(xiàn)貨供應
詢價
VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
詢價
Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
詢價
IR
22+
SOT263
8000
原裝正品支持實單
詢價
Vishay Siliconix
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原裝正品,支持實單
詢價
Vishay Siliconix
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
VISHAY
23+
TO-263
62956
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
詢價
IR
23+24
SOT263
16804
專業(yè)經(jīng)營各種場效應管、三極管、IGBT、可控硅、穩(wěn)壓IC
詢價
更多IRF730STRL供應商 更新時間2025-5-21 14:31:00