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IRFI840G

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.6A)

IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance

IRF

International Rectifier

IRFI840G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLC

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.5A)

DESCRIPTION ThisnewseriesofLowChargePowerHEXFETsachievesignificantlylowergatechargeoverconventionalHEXFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFI840GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLCPBF

HEXFETPowerMOSFET

DESCRIPTION ThisnewseriesofLowChargeHEXFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHEXFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Thesedeviceim

IRF

International Rectifier

IRFI840GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GPBF

HEXFET?PowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF840STR

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SANXINE
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價(jià)
IR
1923+
TO-263
6896
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價(jià)
IR
22+
TO263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
2025+
TO-263
3505
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價(jià)
IR
23+
TO263
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO263
7000
詢價(jià)
VISHAY
24+/25+
D2-PAK(TO-263)
22400
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IR
24+
TO-263
36800
詢價(jià)
IR
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
 詢價(jià)
IR
05+
原廠原裝
44051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
更多IRF840STR供應(yīng)商 更新時(shí)間2025-5-23 10:43:00

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