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IRF9Z34L

Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34LPBF

Surface Mount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34N

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34N

AdvancedPlanarTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9Z34NL

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9Z34NL

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34NL

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF9Z34L

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-262
35890
詢價(jià)
IR
05+
原廠原裝
2096
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
TO-262
8866
詢價(jià)
IR
23+
TO-262
8600
全新原裝現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-262
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
25+
262
8880
原裝認(rèn)準(zhǔn)芯澤盛世！
 詢價(jià)
IR
22+
TO-262
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-262
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-262
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多IRF9Z34L供應(yīng)商 更新時(shí)間2025-5-28 16:55:00

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