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IRFBC30A

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRF

International Rectifier

IRFBC30A

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC30A

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFBC30A

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC30AL

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC30ALPBF

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC30APBF

HEXFET? Power MOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRF

International Rectifier

IRFBC30AS

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRF

International Rectifier

IRFBC30AS

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC30ASPBF

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFBC30A

  • 功能描述：

    MOSFET N-Chan 600V 3.6 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO 220
161067
明嘉萊只做原裝正品現(xiàn)貨
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IR
23+
TO-220
35890
詢價(jià)
IR
05+
原廠原裝
38791
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢價(jià)
IR
24+
TO-220AB
8866
詢價(jià)
VISHAY
23+
TO220AB
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
IR
24+
原廠封裝
4871
原裝現(xiàn)貨假一罰十
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IR/FSC
1738+
TO-220
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO220
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多IRFBC30A供應(yīng)商 更新時(shí)間2025-5-17 19:10:00

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