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IRFIBC30G

Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30G

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=2.2?(MAX) ?Enhancementmode:Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFIBC30G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30GPBF

HEXFET Power MOSFET

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFIBC30G

  • 功能描述：

    MOSFET N-Chan 600V 2.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-220
2860
全新原裝熱賣/假一罰十!更多數(shù)量可訂貨
 詢價
IR
23+
TO-220
15000
全新原裝現(xiàn)貨,假一賠十.
 詢價
IR
21+
TO-220F
2200
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-220F
9896
詢價
IR
05+
TO-220
4000
自己公司全新庫存絕對有貨
 詢價
IR
17+
TO220
6200
100%原裝正品現(xiàn)貨
 詢價
IR
24+
原廠封裝
378
原裝現(xiàn)貨假一罰十
 詢價
IR
24+
TO220
40618
詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
IOR
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
更多IRFIBC30G供應(yīng)商 更新時間2025-5-29 14:03:00

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