IRL1004L中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRL1004L規(guī)格書詳情
Description
Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Logic-Level Gate Drive
產(chǎn)品屬性
- 型號:
IRL1004L
- 功能描述:
MOSFET N-CH 40V 130A TO-262
- RoHS:
否
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO 262 |
161318 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
10+ |
TO-262 |
2450 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
24+ |
TO-262 |
501172 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
2016+ |
TO-262 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
IR |
24+ |
TO-262 |
8866 |
詢價 | |||
IR |
23+ |
TO-262 |
35890 |
詢價 | |||
IR |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
ir |
06+ |
TO-262 |
15000 |
原裝 |
詢價 | ||
IR |
24+ |
TO-262 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |