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TDA8510

26WBTLand2x13WSEpoweramplifiers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA8510J

26WBTLand2x13WSEpoweramplifiers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導體

UFR8510

ULTRAFASTRECOVERYRECTIFIER

MicrosemiMicrosemi Corporation

美高森美美高森美公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    ISL8510IRZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 線性穩(wěn)壓器控制器

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 拓撲:

    降壓(1),線性(LDO)(1)

  • 頻率 - 開關(guān):

    500kHz

  • 電壓/電流 - 輸出 1:

    0.6V ~ 20V,1A

  • 電壓/電流 - 輸出 2:

    0.6V ~ 4.2V,500mA

  • 帶 LED 驅(qū)動器:

  • 帶監(jiān)控器:

  • 帶定序器:

  • 電壓 - 供電:

    5V,5.5V ~ 25V

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    24-VFQFN 裸露焊盤

  • 供應商器件封裝:

    24-QFN(4x4)

  • 描述:

    IC REG DL BUCK/LNR 500KHZ 24QFN

供應商型號品牌批號封裝庫存備注價格
INTERSIL
24+
65300
一級代理/放心購買!
詢價
Intersil
24+
24-QFN
6348
原裝現(xiàn)貨
詢價
INTERSIL
2447
QFN24
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
INTERSIL
20+
QFN-24
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
INTERSIL
23+
QFN24
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
INTERSIL
21+
QFN
10000
原裝現(xiàn)貨假一罰十
詢價
INTERSIL
21+
QFN
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
INTERSIL
23+
QFN
9920
原裝正品,支持實單
詢價
INTERSIL
1314+
QFN24
260
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
Renesas
22+
24-VFQFN
9000
原廠渠道,現(xiàn)貨配單
詢價
更多ISL8510IRZ-T供應商 更新時間2025-5-20 10:05:00