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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
ISPD08N50C3	文件：345.78 Kbytes Page：2 Pages	Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤600m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
SPA08N50C3	文件：270.3 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?DrainCurrentID=7.6A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switching	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
SPA08N50C3	文件：265.73 Kbytes Page：13 Pages	CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScomp	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPA08N50C3	文件：732.57 Kbytes Page：14 Pages	NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPD08N50C3	文件：620.29 Kbytes Page：11 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPD08N50C3	文件：256.75 Kbytes Page：11 Pages	CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant;availableinHalogenfreem	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPD08N50C3	文件：345.78 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤600m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
SPD08N50C3	文件：710.74 Kbytes Page：11 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPI08N50C3	文件：732.57 Kbytes Page：14 Pages	NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPI08N50C3	文件：265.73 Kbytes Page：13 Pages	CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScomp	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

ISPD08N50C3

文件：345.78 Kbytes

Page：2 Pages

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤600m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISC

SPA08N50C3

文件：270.3 Kbytes

Page：2 Pages

IscN-ChannelMOSFETTransistor

?FEATURES ?DrainCurrentID=7.6A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISC

SPA08N50C3

文件：265.73 Kbytes

Page：13 Pages

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScomp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPA08N50C3

文件：732.57 Kbytes

Page：14 Pages

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPD08N50C3

文件：620.29 Kbytes

Page：11 Pages

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPD08N50C3

文件：256.75 Kbytes

Page：11 Pages

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant;availableinHalogenfreem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPD08N50C3

文件：345.78 Kbytes

Page：2 Pages

N-ChannelMOSFETTransistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤600m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISC

SPD08N50C3

文件：710.74 Kbytes

Page：11 Pages

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPI08N50C3

文件：732.57 Kbytes

Page：14 Pages

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPI08N50C3

文件：265.73 Kbytes

Page：13 Pages

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScomp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

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深圳市能元時代電子有限公司	ISPD63	ISOCOM	23+	14+	38493	##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術	詢價

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