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IXFH60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH60N20F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH60N20F

HiPerRFTMPowerMOSFETs

HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFT60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiveloadswitching(UIS) ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easytomount ?Spacesav

IXYS

IXYS Corporation

IXFT60N20F

HiPerRFPowerMOSFETF-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXTP60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Corporation

IXTQ60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTQ60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Corporation

詳細參數

  • 型號：

    IXTA60N20T

  • 功能描述：

    MOSFET 60 Amps 200V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
2018+
TO263
6528
只做原裝正品假一賠十!只要網上有上百分百有庫存放心
 詢價
IXYS
23+
TO-263-3
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO263
50000
全新原裝正品現貨,支持訂貨
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS/艾賽斯
21+
TO263
10000
原裝現貨假一罰十
 詢價
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現貨配單
 詢價
IXYS/艾賽斯
23+
TO263
80759
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS/艾賽斯
23+
TO-263
6000
原裝正品，支持實單
 詢價
更多IXTA60N20T供應商 更新時間2025-5-23 17:16:00

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