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IXFE180N10

HiPerFET-TMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features ?ConformstoSOT-227Boutline ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?

IXYS

IXYS Corporation

IXFK180N10

SingleMOSFETDie

VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode

IXYS

IXYS Corporation

IXFN180N10

PowerMOSFET

IXYS

IXYS Corporation

IXFN180N10

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·SynchronousRectification ·LowVoltagerelays ·BatteryChargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN180N10

HiPerFETPowerMOSFETSingleMOSFETDie

HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackage ?miniBLOC,withAluminiumNitrideIsolation ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowRDS(on) ?LowDrain-to-TabCapacitan

IXYS

IXYS Corporation

IXFR180N10

HiPerFETPowerMOSFETsISOPLUS247

VDSS=100V ID25=165A RDS(on)=8m? trr≤250ns SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX180N10

HiperFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX180N10

SingleMOSFETDie

VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXTQ180N10T

  • 功能描述：

    MOSFET 180 Amps 100V 6.1 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-3P
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS
三年內(nèi)
1983
只做原裝正品
 詢價
IXYS/艾賽斯
23+
TO-3P-3
90000
一定原裝深圳現(xiàn)貨
 詢價
IXYS
1931+
N/A
49
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
IXYS
1809+
TO-3P
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
IXYS
22+
NA
49
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS/艾賽斯
21+
TO-3P
10000
原裝現(xiàn)貨假一罰十
 詢價
IXYS
22+
TO3P3 SC653
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS/艾賽斯
23+
TO-3P
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS/艾賽斯
23+
TO-3P
6000
原裝正品，支持實(shí)單
 詢價
更多IXTQ180N10T供應(yīng)商 更新時間2025-5-23 15:14:00

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