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MIP1N60E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

MO1N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

MSU1N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTA1N60E

FULLYISOLATEDTMOSE-FETPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM

TMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N60

PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N60

N-ChannelMosfetTransistor

?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent-ID=1A@TC=25°C ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirements

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MTP1N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N60E

TMOSPOWERFET1.0AMPERES600VOLTSRDS(on)=8.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應商型號品牌批號封裝庫存備注價格
Sino
22+
TO-220
6000
十年配單,只做原裝
詢價
Sino
23+
TO-220
6000
原裝正品,支持實單
詢價
Sino
22+
TO-220
25000
只做原裝進口現貨,專注配單
詢價
Sino
25+
TO-TO-220
37650
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
詢價
SINO-MICRO
20+
TO-220
32500
現貨很近!原廠很遠!只做原裝
詢價
SINO-MICRO
23+
TO-220F
32500
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
華微
23+
SOT223
28533
原盒原標,正品現貨 誠信經營 價格美麗 假一罰十!
詢價
華微
23+
SOT-223
89630
當天發(fā)貨全新原裝現貨
詢價
華微
19
SOT223
880000
明嘉萊只做原裝正品現貨
詢價
Sino
21+
TO-252
10000
原裝現貨假一罰十
詢價
更多JCS1N60C供應商 更新時間2025-5-19 14:01:00