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KF8N60

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

KF8N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KF8N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF8N60P

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

KF8N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KIA8N60HF

商品目錄MOS(場(chǎng)效應(yīng)管) 連續(xù)漏極電流（Id）（25°C時(shí)）7.5A(Tc) 漏源電壓（Vdss）600V 柵源極閾值電壓4V@250uA 漏源導(dǎo)通電阻1.2Ω@3.75A,10V 類型N溝道 最大功率耗散（Ta）48W(Tc)

KIAKIA Semiconductor Technology

可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司

KP8N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I

KECKEC CORPORATION

KEC株式會(huì)社

KP8N60F

iscN-ChannelMOSFETTransistor

?DESCRITION ?Suitableforactivepowerfactorcorrectionandswitchingmode Powersupplies ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.58? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KP8N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I

KECKEC CORPORATION

KEC株式會(huì)社

KPS8N60D

ThisSuperJunctionMOSFEThasbettercharacteristics

KECKEC CORPORATION

KEC株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    JCS8N60FB-O-F-N-B

  • 制造商：

    JSMC

  • 制造商全稱：

    JILIN SINO-MICROELECTRONICS CO., LTD.

  • 功能描述：

    N-CHANNEL MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SINO-MICRO
2022+
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50000
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Sino-Micro
23+
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6000
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SINO-MICRO
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30000
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Sino-Micro
25+
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37650
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VBSEMI/微碧半導(dǎo)體
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60000
全新原裝現(xiàn)貨
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VBSEMI/微碧半導(dǎo)體
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TO220F
7800
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華微
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吉林華微
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24+
N/A
64000
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吉林華微
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更多JCS8N60FB-O-F-N-B供應(yīng)商 更新時(shí)間2025-5-9 14:01:00

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