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M29F200T-120N3TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-120N6R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-120N6TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-55M1R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-55M1TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-55M3R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-55M3TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-55M6R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-55M6TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200T-55N1R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    M29F200T

  • 功能描述：

    電可擦除可編程只讀存儲(chǔ)器 256Kx8 or 128Kx16 70

  • RoHS：

    否

  • 制造商：

    Atmel

  • 存儲(chǔ)容量：

    2 Kbit

  • 組織：

    256 B x 8

  • 數(shù)據(jù)保留：

    100 yr

  • 最大時(shí)鐘頻率：

    1000 KHz

  • 最大工作電流：

    6 uA

  • 工作電源電壓：

    1.7 V to 5.5 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-8

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
3000
公司存貨
 詢價(jià)
SGSTHOMSON
05+
原廠原裝
4810
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
ST
2020+
TSOP
20
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
ST
2016+
QFP
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品!
 詢價(jià)
ST
24+
SOP44
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
ST
25+23+
TSOP
54830
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
ST
20+
TSOP
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
 詢價(jià)
ST
2022+
24
全新原裝 貨期兩周
 詢價(jià)
ST
23+
SOP44
9800
全新原裝現(xiàn)貨,假一賠十
 詢價(jià)
ST/意法
23+
TSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多M29F200T供應(yīng)商 更新時(shí)間2025-5-7 10:20:00

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