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MBR150

1.0AAxialLeadedSchottkyBarrierRectifierDiodes

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MBR150

1ASCHOTTKYRECTIFIER

1ASCHOTTKYRECTIFIER

DIGITRON

Digitron Semiconductors

MBR150

LowReverseCurrent

Features ?LowReverseCurrent ?LowStoredCharge.MajorityCarrierConduction ?LowPowerLoss/HighEfficiency ?HighlyStableOxidePassivatedJunction

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MBR150E

SCHOTTKYBARRIERRECTIFIERSREVERSEVOLTAGE20VTO200VFORWARDCURRENT1.0A

DESCRIPTION The MBR120E~MBR1200Eisavailablein SOD-323HEPackage FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V 0 ?Lowpowerloss,highefficiency ?Foruseinlowvoltagehighfrequencyinverters, freewheeling, andpolarityprotection appl

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

MBR150F

SchottkyDiodes

■Features ●Lowpowerloss,highefficiency ●Highforwardsurgecurrentcapability ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

MBR150G

AxialLeadRectifiers

TheMBR150/160seriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinverters,free

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBR150RL

AxialLeadRectifiers

TheMBR150/160seriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinverters,free

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBR150RLG

AxialLeadRectifiers

TheMBR150/160seriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinverters,free

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBR150TR

SchottkyRectifier,1A

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBR150TR

SchottkyRectifier,1A

DESCRIPTION TheVS-MBR...axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,freewheelingdiodes,andreversebatteryprotection. FEATURES ?Lowprofile,axiallea

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    MAX150BEWP-T

  • 功能描述：

    模數(shù)轉(zhuǎn)換器 - ADC

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 通道數(shù)量：

    2

  • 結(jié)構(gòu)：

    Sigma-Delta

  • 轉(zhuǎn)換速率：

    125 SPs to 8 KSPs

  • 分辨率：

    24 bit

  • 輸入類(lèi)型：

    Differential

  • 信噪比：

    107 dB

  • 接口類(lèi)型：

    SPI

  • 工作電源電壓：

    1.7 V to 3.6 V, 2.7 V to 5.25 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    VQFN-32

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更多MAX150BEWP-T供應(yīng)商 更新時(shí)間2025-5-18 11:02:00

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