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MSB608

BRIDGERECTIFIER

Features ·Glasspassivatedjunction. ·Idealforprintedcircuitboard. ·Reliablelowcostconstructionutilizing moldedplastictechnique. ·Highsurgecurrentcapability. ·Hightemperaturesolderingguaranteed:

DAESAN

Daesan Electronics Corp.

MWP-608

104WTripleOutputSwitchingPowerSupply

MEANWELLMean Well Enterprises Co., Ltd.

明緯電子明緯（廣州）電子有限公司

NDB608A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB608A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB608AE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB608AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB608B

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB608B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB608BE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB608BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅??！
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Microchip Technology
24+
8-SOIC
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一級代理/放心采購
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更多MCP608ISLASHP供應(yīng)商 更新時間2025-5-24 10:31:00

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