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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
45N10	文件：340.44 Kbytes Page：8 Pages	N-Channel100-V(D-S)MOSFET FEATURES TrenchFET??PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100%RgTested APPLICATIONS ?IsolatedDC/DCConverters	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
CEB45N10	文件：642.61 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP45N10	文件：642.61 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP45N10	文件：451.91 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,44A,RDS(ON)=39mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
MTW45N10E	文件：323.03 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=35mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MTW45N10E	文件：155.55 Kbytes Page：8 Pages	TMOSPOWERFET45AMPERES100VOLTSRDS(on)=0.035OHM TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafas	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
SPR45N10	文件：406.48 Kbytes Page：4 Pages	N-ChannelEnhancementModePowerMOSFET	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
SSP45N10	文件：581.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
STB45N10L	文件：87.55 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.028? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■LOWLEAKAGECURRENT ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STD45N10	文件：134.73 Kbytes Page：10 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor	SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司	Samhop

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

45N10

文件：340.44 Kbytes

Page：8 Pages

N-Channel100-V(D-S)MOSFET

FEATURES TrenchFET??PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100%RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBSEMI

CEB45N10

文件：642.61 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEP45N10

文件：642.61 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEP45N10

文件：451.91 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,44A,RDS(ON)=39mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

MTW45N10E

文件：323.03 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=35mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISC

MTW45N10E

文件：155.55 Kbytes

Page：8 Pages

TMOSPOWERFET45AMPERES100VOLTSRDS(on)=0.035OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

Motorola

SPR45N10

文件：406.48 Kbytes

Page：4 Pages

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SSP45N10

文件：581.05 Kbytes

Page：4 Pages

N-ChannelEnhancementModeMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

STB45N10L

文件：87.55 Kbytes

Page：6 Pages

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.028? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■LOWLEAKAGECURRENT ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STMICROELECTRONICS

STD45N10

文件：134.73 Kbytes

Page：10 Pages

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

Samhop

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市中福國際管理有限公司	MCU45N10	MCC/美微科	24+	DPAK	360000	交期準時服務周到	詢價
深圳市南科功率半導體有限公司	MCU45N10	NK/南科功率	2025+	DPAK	986966	國產(chǎn)	詢價
深圳市納睿斯電子科技有限公司	MCU45N10HE3-TP	MICRO	25+		30000	原裝現(xiàn)貨,支持實單	詢價
深圳市富芯樂電子科技有限公司	MCU45P04A-TP	MCC	24+	DPAK(TO-252)	25030	只做原裝正品現(xiàn)貨歡迎來電查詢15919825718	詢價
深圳市達恩科技有限公司	MCU45P04-TP	MICRO COMMERCIAL	24+	N/A	47048	原裝原裝原裝	詢價
現(xiàn)代芯城（深圳）科技有限公司	MCU50N03A-TP		24+	N/A	57000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價

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