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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
MJ802	文件：54.14 Kbytes Page：1 Pages	PowerTransistors PowerTransistors TO-3Case(Continued)	CentralCentral Semiconductor Corp 美國中央半導(dǎo)體	Central
MJ802	文件：117.15 Kbytes Page：3 Pages	iscSiliconNPNPowerTransistor DESCRIPTION ?HighDCCurrentGain- :hFE=25-100@IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtoTypeMJ4502 APPLICATIONS ?Designedforuseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MJ802	文件：110.6 Kbytes Page：3 Pages	SiliconNPNPowerTransistors DESCRIPTION ?WithTO-3package ?ComplementtotypeMJ4502 ?Excellentsafeoperatingarea APPLICATIONS ?Foruseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel	SAVANTIC Savantic, Inc.	SAVANTIC
MJ802	文件：76.07 Kbytes Page：4 Pages	High??owerNPNSiliconTransistor	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MJ802	文件：42.92 Kbytes Page：4 Pages	SILICONNPNPOWERTRANSISTOR	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
MJ802	文件：76.82 Kbytes Page：2 Pages	High-PowerNPNSiliconTransistor High-PowerNPNSiliconTransistor Thistransistorisforuseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel. Features ?HighDCCurrentGain-hFE=25-100IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtothePNPMJ4502	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
MJ802	文件：112.18 Kbytes Page：3 Pages	SiliconNPNPowerTransistors	SAVANTIC Savantic, Inc.	SAVANTIC
MJ802G	文件：76.07 Kbytes Page：4 Pages	High??owerNPNSiliconTransistor	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MJ802G	文件：255.02 Kbytes Page：2 Pages	SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=90V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.8V(Max)@IC=7.5A APPLICATIONS ·Designedforuseasanoutputdeviceincomplementary audioamplifiersto100-Wattsmusicpowerperchannel.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MJE802	文件：51.86 Kbytes Page：4 Pages	MonolithicConstructionWithBuilt-inBase-EmitterResistors MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

MJ802

文件：54.14 Kbytes

Page：1 Pages

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

Central

MJ802

文件：117.15 Kbytes

Page：3 Pages

iscSiliconNPNPowerTransistor

DESCRIPTION ?HighDCCurrentGain- :hFE=25-100@IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtoTypeMJ4502 APPLICATIONS ?Designedforuseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

MJ802

文件：110.6 Kbytes

Page：3 Pages

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-3package ?ComplementtotypeMJ4502 ?Excellentsafeoperatingarea APPLICATIONS ?Foruseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel

SAVANTIC

Savantic, Inc.

SAVANTIC

MJ802

文件：76.07 Kbytes

Page：4 Pages

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ONSEMI

MJ802

文件：42.92 Kbytes

Page：4 Pages

SILICONNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

MJ802

文件：76.82 Kbytes

Page：2 Pages

High-PowerNPNSiliconTransistor

High-PowerNPNSiliconTransistor Thistransistorisforuseasanoutputdeviceincomplementaryaudioamplifiersto100-Wattsmusicpowerperchannel. Features ?HighDCCurrentGain-hFE=25-100IC=7.5A ?ExcellentSafeOperatingArea ?ComplementtothePNPMJ4502

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NJSEMI

MJ802

文件：112.18 Kbytes

Page：3 Pages

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

SAVANTIC

MJ802G

文件：76.07 Kbytes

Page：4 Pages

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ONSEMI

MJ802G

文件：255.02 Kbytes

Page：2 Pages

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=90V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.8V(Max)@IC=7.5A APPLICATIONS ·Designedforuseasanoutputdeviceincomplementary audioamplifiersto100-Wattsmusicpowerperchannel.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

MJE802

文件：51.86 Kbytes

Page：4 Pages

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Fairchild

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