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MSRTA20080D

SiliconStandardRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

PNE20080CPE

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PNE20080CPE-Q

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PNE20080CPE-QZ

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PNE20080CPEZ

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PNE20080EPE

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PNE20080EPE-Q

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PNE20080EPE-QZ

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PNE20080EPEZ

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PTB20080

25Watts,1.6-1.7GHzRFPowerTransistor

Description ThPTB20080isaclassA/AB,NPN,siliconbipolarjunction,internallymatchedRFpowertransistorintendedfor26Vdcoperationfrom1.6to1.7GHz.Itisratedat25WattsminimumoutputpowerforPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallization

EricssonEricsson Microelectronics

愛立信愛立信公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MSRT20080D

  • 制造商:

    GeneSiC Semiconductor

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 陣列

  • 包裝:

    散裝

  • 描述:

    DIODE GEN PURP 800V 200A 3 TOWER

供應(yīng)商型號品牌批號封裝庫存備注價格
GeneSiC
1935+
N/A
55
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詢價
GENESIC
1809+
三塔
96
就找我吧!--邀您體驗愉快問購元件!
詢價
GeneSiC
22+
NA
55
加我QQ或微信咨詢更多詳細信息,
詢價
GeneSiC Semiconductor
22+
Three Tower
9000
原廠渠道,現(xiàn)貨配單
詢價
GeneSiC Semiconductor
21+
Three Tower
610880
本公司只售原裝 支持實單
詢價
GeneSiC Semiconductor
23+
Three Tower
9000
原裝正品,支持實單
詢價
GeneSiC Semiconductor
25+
三塔
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
更多MSRT20080D供應(yīng)商 更新時間2025-5-24 10:19:00