首頁(yè) >MT129-R>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
GLASSPASSIVATEDSUPERFASTRECTIFIER | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒濟(jì)南晶恒電子有限責(zé)任公司 | JINGHENG | ||
3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PolyurethaneAdhesive-BackBumpers | HeycoHeyco. ?？?/span> | Heyco | ||
SPECIFICATIONSFORWHITELED | NICHIANichia Corporation&Subsidiaries 日亞化學(xué)工業(yè)株式會(huì)社 | NICHIA | ||
WHITELED | NICHIANichia Corporation&Subsidiaries 日亞化學(xué)工業(yè)株式會(huì)社 | NICHIA | ||
SiliconComplementaryTransistorsAudioOutput,Video,Driver Description: TheNTE128(NPN)andNTE129(PNP)aresiliconcomplementarytransistorsinaTO39typepackagedesignedprimarilyforamplifierandswitchingapplications.Thesedevicesfeatureshighbreakdownvoltages,lowleakagecurrents,lowcapacity,andabetausefuloveranextremelywidec | NTE NTE Electronics | NTE | ||
SiliconComplementaryTransistorsGeneralPurposeAmp Description: TheNTE128P(NPN)andNTE129P(PNP)aresiliconcomplemedntarytransistorsdesignedforuseingeneralpurposepoweramplifierandswitchingapplications. Features: ?HighVCERatings ?ExceptionalPowerDissipationCapability | NTE NTE Electronics | NTE | ||
Ultra-LowBiasCurrentDifetOPERATIONALAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
Ultra-LowBiasCurrentDifetPERATIONALAMPLIFIER | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI | ||
OPERATIONALAMPLIFIER | TI1Texas Instruments 德州儀器美國(guó)德州儀器公司 | TI1 |
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